Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers
- 1 April 2006
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 35 (4) , 592-598
- https://doi.org/10.1007/s11664-006-0105-1
Abstract
No abstract availableKeywords
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