Modulation-doped superlattices with delat layers in silicon
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 21-29
- https://doi.org/10.1016/0040-6090(90)90393-r
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxyJournal of Applied Physics, 1989
- Subband physics for a “realistic” δ-doping layerSurface Science, 1988
- Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxyJournal of Applied Physics, 1987
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985
- Doping of silicon in molecular beam epitaxy systems by solid phase epitaxyApplied Physics Letters, 1984
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978