Effect of transferred-electron velocity modulation in high-efficiency GaAs IMPATT diodes
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3934-3940
- https://doi.org/10.1063/1.322141
Abstract
Numerical calculations, supplemented by detailed physical interpretation, show that the high (greater than 30%) output efficiencies, experimentally obtained with GaAs non‐punch‐through IMPATT devices, are only possible due to the specific features (related to the transferred‐electron effect) of the electron velocity versus electric field dependence in this material. Comparison is made with experimental results. Based on this new understanding, suggestions are made for further improvement of IMPATT performance.This publication has 8 references indexed in Scilit:
- FM noise of high−efficiency GaAs IMPATT oscillators and amplifiersApplied Physics Letters, 1975
- Crossover frequencies and turn-off time reduction scheme for twisted nematic liquid crystal displaysApplied Physics Letters, 1974
- High-efficiency GaAs lo-hi-lo IMPATT devices by liquid phase epitaxy for X bandApplied Physics Letters, 1974
- GaAs Schottky—Read diodes for x-band operationIEEE Transactions on Electron Devices, 1974
- Efficiency limitation by transverse instability in Si IMPATT diodesProceedings of the IEEE, 1974
- Noise performance of gallium-arsenide and indium-phosphide injection-limited diodesElectronics Letters, 1973
- Theoretical and experimental study of GaAs IMPATT oscillator efficiencyJournal of Applied Physics, 1973
- Influence of carrier velocity saturation in the unswept layer on the efficiency of avalanche transit time diodesProceedings of the IEEE, 1971