PRBS generation and error detection above 10 Gb/s using a monolithic Si bipolar IC

This publication has 10 references indexed in Scilit:

• Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s
  IEEE Journal of Solid-State Circuits, 1993
• A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1993
• 12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC
  Electronics Letters, 1992
• 30 Gbit/s multiplexer and demultiplexer ICs in silicon bipolar technology
  Electronics Letters, 1992
• A Si bipolar phase and frequency detector IC for clock extraction up to 8 Gb/s
  IEEE Journal of Solid-State Circuits, 1992
• High performance hybrid circuit modules for lightwave systems operating at data rates of 10 Gbit/s and higher
  Electronics Letters, 1991
• Proposal for a versatile monolithic multi-Gbit/s m-sequence test system
  Electronics Letters, 1990
• A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts
  IEEE Electron Device Letters, 1990
• Series-parallel generation of m-sequences
  Radio and Electronic Engineer, 1975