The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
In this work, we present results and analysis which demonstrate the influence of rapid thermal annealing (RTA) on the properties of the Si(100)-SiO2 interface. Polysilicon/oxide/silicon capacitor structures were subjected to RTA treatments, in a nitrogen ambient, over the temperature range 600-1050°C. The structures were examined using high frequency and quasi-static capacitance-voltage (CV) analysis to determine the interface state density profile across the energy gap immediately following the RTA step. The effect of hydrogen annealing subsequent to the RTA process is also presented. Based on the analysis of the interface state density profiles, it is suggested in this work, that RTA (T > 600°C) exposes silicon dangling bond (Pb) centres at the Si(100)-SiO2 interface. The implications of this work to the study of the Si-SiO2 interface, and the technological implications for silicon based MOS processes, are discussed.Keywords
This publication has 13 references indexed in Scilit:
- Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structuresMicroelectronics Reliability, 1998
- Potential fluctuations due to Pb centres at the interfaceMicroelectronic Engineering, 1997
- Revision of H2 passivation of P b interface defects in standard (111)Si/SiO2Applied Physics Letters, 1996
- Surface-potential dependence of interface-state passivation in metal–tunnel-oxide–silicon diodesPhysical Review B, 1994
- Atomic hydrogen reactions withcenters at the (100) Si/interfacePhysical Review Letters, 1994
- Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealingJournal of Applied Physics, 1993
- MOS interface states: overview and physicochemical perspectiveSemiconductor Science and Technology, 1989
- The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxidesIEEE Electron Device Letters, 1988
- Rapid thermal anneal induced effects in polycrystalline silicon gate structuresApplied Physics Letters, 1987
- Electronic traps and P b centers at the Si/SiO2 interface: Band-gap energy distributionJournal of Applied Physics, 1984