Radiation effects on fluorinated field oxides and associated devices
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 2026-2032
- https://doi.org/10.1109/23.101225
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Radiation effects on ion-implanted silicon-dioxide filmsIEEE Transactions on Nuclear Science, 1989
- Radiation hardened micron and submicron MOSFETs containing fluorinated oxidesIEEE Transactions on Nuclear Science, 1989
- The effect of fluorine implantation on the interface radiation hardness of Si-gate metal-oxide-semiconductor transistorsJournal of Applied Physics, 1989
- Hot-electron hardened Si-gate MOSFET utilizing F implantationIEEE Electron Device Letters, 1989
- Dielectric characteristics of fluorinated ultradry SiO2Applied Physics Letters, 1989
- Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/IEEE Electron Device Letters, 1988
- Radiation Response of MOS Capacitors Containing Fluorinated OxidesIEEE Transactions on Nuclear Science, 1987
- Gamma and vacuum ultraviolet irradiations of ion implanted SiO2 for MOS dielectricsIEEE Transactions on Nuclear Science, 1974
- Radiation Hardening of Thermal Oxides on Silicon via Ion ImplantationIEEE Transactions on Nuclear Science, 1969
- Radiation Effects in Modified Oxide Insulators in MOS StructuresIEEE Transactions on Nuclear Science, 1968