Si selective epitaxial growth using Cl2 pulsed molecular flow method
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 321 (1-2) , 256-260
- https://doi.org/10.1016/s0040-6090(98)00483-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A vertical-cavity P-i-N SiGe/Si photodetector for Si-based OEICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A selective epitaxial SiGe/Si planar photodetector for Si-based OEICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technologyIEEE Transactions on Electron Devices, 1994
- Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor depositionJournal of Crystal Growth, 1994
- Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2Journal of Crystal Growth, 1992
- Hydrogen coverage during Si growth from SiH4 and Si2H6Applied Physics Letters, 1992
- Limiting conditions of Si selective epitaxial growth in Si2H6 gas-source molecular beam epitaxyApplied Physics Letters, 1991
- New Mechanism for Hydrogen Desorption from Covalent Surfaces: The Monohydride Phase on Si(100)Physical Review Letters, 1989
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988