AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
- 26 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (9) , 1729-1731
- https://doi.org/10.1063/1.1501157
Abstract
AlN/GaN double-barrier resonant tunneling diodes (DB–RTDs) were fabricated on (0001) Al 2 O 3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB–RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current–voltage characteristics of mesa diode samples showed clear negative differential resistance(NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180 A/cm 2 . A peak-to-valley current ratio as high as 32 was obtained.Keywords
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