Tripyramids and associated defects in epitaxial silicon layers

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Abstract
Tripyramids and the associated defects present in epitaxial Si layers grown on (111) Si substrates have been examined by transmission electron microscopy and selected-area transmission electron diffraction, and their nature and crystallography directly determined. The tripyramids consist of a central triangular area, twinned about the (111) substrate plane, together with three surrounding segments, each initially twinned about the (111) substrate plane and subsequently twinned about an inclined {111} plane. The associated defects mostly consist of micro-twin lamellae, each twinned about an inclined {111} plane. The different types of interface occurring in the tripyramids are discussed, and mechanisms are suggested to account for the formation of both the tripyramids and the associated defects.