Rapid thermal processing uniformity using multivariable control of a circularly symmetric 3 zone lamp
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 5 (3) , 180-188
- https://doi.org/10.1109/66.149811
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ CleaningMRS Proceedings, 1991
- Temperature Uniformity Optimization Using Three-Zone Lamp and Dynamic Control in Rapid Thermal MultiprocessorMRS Proceedings, 1991
- Improvement of Temperature Uniformity in Rapid Thermal Processing Systems Using Multivariable ControlMRS Proceedings, 1991
- Steady-state thermal uniformity and gas flow patterns in a rapid thermal processing chamberIEEE Transactions on Semiconductor Manufacturing, 1991
- A model for rapid thermal processing: achieving uniformity through lamp controlIEEE Transactions on Semiconductor Manufacturing, 1991
- Single Wafer Rapid Thermal MultiprocessingMRS Proceedings, 1989
- Simulation of Temperature Effects during Rapid Thermal ProcessingMRS Proceedings, 1989
- Thermal and stress analysis of semiconductor wafers in a rapid thermal processing ovenIEEE Transactions on Semiconductor Manufacturing, 1988
- Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effectsJournal of Applied Physics, 1984