Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition

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Abstract
The InP metal‐oxide‐semiconductor structure using SiO2 film as an insulator was deposited by mercury‐sensitized photoinduced chemical vapor deposition ultilizing a gaseous mixture of silane (SiH4 ) and nitrous oxide (N2 O) under 253.7‐nm ultraviolet light irradiation. The structural and electrical properties of the deposited film were then evaluated with emphasis on the substrate temperature dependence. An increase of the substrate temperature (Tsub ) has effects of increasing the refractive index and decreasing the etching rate, oxide charge density, and interface state density. Postoxidation annealing in a N2 environment at 300 °C decreases the interface states as well as the oxide charge.