SiC material for high-power applications
- 30 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 203-209
- https://doi.org/10.1016/s0921-5107(96)01984-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etchingJournal of Crystal Growth, 1996
- Reduction of unintentional aluminum spikes at SiC vapor phase epitaxial layer/substrate interfacesApplied Physics Letters, 1996
- A 4.5 kV 6H silicon carbide rectifierApplied Physics Letters, 1995
- High performance of high-voltage 4H-SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- Long minority carrier lifetimes in 6H SiC grown by chemical vapor depositionApplied Physics Letters, 1995
- Possible lifetime-limiting defect in 6H SiCApplied Physics Letters, 1994
- Photoluminescence determination of the nitrogen doping concentration in 6H-SiCApplied Physics Letters, 1994
- 2000 V 6H-SiC p-n junction diodes grown by chemical vapor depositionApplied Physics Letters, 1994
- Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanismCrystal Research and Technology, 1981