Properties of lnAsxP1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As4 beam
- 1 March 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (3) , 379-384
- https://doi.org/10.1007/bf02666606
Abstract
No abstract availableKeywords
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