Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering
- 12 December 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 54 (6) , 2468-2473
- https://doi.org/10.1109/tns.2007.908147
Abstract
Neutron and alpha SER test results are presented for two SRAMs processed in a commercial 65 nm CMOS technology. Devices with the commonly used triple well option have higher rates of multiple cell upsets (MCU) and therefore higher SER. The same behavior is reported for older technologies from 180 nm to 65 nm. Full 3-D device simulations on 65 nm SRAM cells quantify the amplification of the charge collection with the usage of triple well and frequency of well contacts.Keywords
This publication has 11 references indexed in Scilit:
- A Statistical Technique to Measure the Proportion of MBU's in SEE TestingIEEE Transactions on Nuclear Science, 2006
- Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS TechnologyIEEE Transactions on Nuclear Science, 2006
- Impacts of front-end and middle-end process modifications on terrestrial soft error rateIEEE Transactions on Device and Materials Reliability, 2005
- Radiation-induced soft errors in advanced semiconductor technologiesIEEE Transactions on Device and Materials Reliability, 2005
- Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMsIEEE Transactions on Nuclear Science, 2005
- Investigation of multi-bit upsets in a 150 nm technology SRAM deviceIEEE Transactions on Nuclear Science, 2005
- Alpha-particle SEU performance of SRAM with triple wellIEEE Transactions on Nuclear Science, 2004
- Cosmic-ray multi-error immunity for SRAM, based on analysis of the parasitic bipolar effectPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domainIEEE Transactions on Nuclear Science, 1998
- Soft-error-rate improvement in advanced BiCMOS SRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993