A comparative study of silicon deposition from SiCl4 in cold plasma using argon, H2 or Ar + H2
- 1 January 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 156 (1) , 79-92
- https://doi.org/10.1016/0040-6090(88)90284-2
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Decomposition of SiCl4 and deposition of Si in inductively coupled plasmas of H2+SiCl4Plasma Chemistry and Plasma Processing, 1987
- The influence of argon addition on the deposition and properties of Si:H, Cl films prepared in a glow dischargeThin Solid Films, 1986
- Mechanism and kinetics of tetrachlorosilane reactions in an argon-hydrogen microwave plasmaJournal of Applied Physics, 1984
- Deposition rate and structural properties of microcrystalline glow discharge Si:H, Cl filmsThin Solid Films, 1983
- New silicon hydrogen infrared vibrational band associated to HSiCl configurations in an amorphous silicon matrix : Green's function theory approachPhysica B+C, 1983
- Effect of frequency on the deposition of microcrystalline silicon from tetrachlorosilane in low-pressure r.f. plasmasPlasma Chemistry and Plasma Processing, 1982
- Ion and radical reactions in the silane glow discharge deposition of a-Si:H filmsPlasma Chemistry and Plasma Processing, 1982
- A study of the silane glow discharge deposition by isotopic labellingThin Solid Films, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980