Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD system
- 1 July 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 112 (4) , 791-796
- https://doi.org/10.1016/0022-0248(91)90136-s
Abstract
No abstract availableKeywords
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