Layered Structures Composed of Si, Ge, GaAs, and Fluorides
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposureJournal of Applied Physics, 1988
- Control of the Initial Stage of Ge Overgrowth on CaF2/Si Structures by Electron Beam ExposureMRS Proceedings, 1987
- Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layersSurface Science, 1986
- Use of a rapid anneal to improve CaF2:Si (100) epitaxyApplied Physics Letters, 1985
- Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of SiMRS Proceedings, 1985
- Control of Crystal Orientations in Lattice-Mismatched SrF2 and (Ca, Sr)F2 Films on Si Substrates by Intermediate CaF2 FilmsJapanese Journal of Applied Physics, 1985
- GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperatureJournal of Applied Physics, 1984
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si SubstratesJapanese Journal of Applied Physics, 1983
- Epitaxial relations in group-IIa fluoride/Si(111) heterostructuresApplied Physics Letters, 1983