Evaluation of Device Charging in Ion Implantation
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11S)
- https://doi.org/10.1143/jjap.30.3223
Abstract
Device charging in the ion implantation is evaluated by using two different types of electrically erasable-programmable read-only memory (EEPROM) devices and two different types of metal-oxide-semiconductor (MOS) capacitors. The averaged charging voltage is measured by the turn-on voltage shift (ΔV T) of a grounded source EEPROM, while the transient charging effect is detected by a floating source EEPROM. The yield of the MOS capacitor reaches its maximum when the grounded source EEPROM shows the minimum ΔV T. The effects of the charge-collecting electrode area and substrate type of the MOS capacitor are also examined.Keywords
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