Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors
- 12 November 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (20) , 4178-4180
- https://doi.org/10.1063/1.1628394
Abstract
Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an activation energy of This value is largely independent of surface cleaning processes or the type of passivation film MgO) used to reduce the current collapse phenomena in the devices. However, the magnitude of the isolation current is a strong function of the surface treatment employed. The lowest isolation currents for conditions under which current collapse is mitigated are obtained using passivation layers.
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