Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)
- 22 April 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (17) , 3156-3159
- https://doi.org/10.1103/physrevlett.76.3156
Abstract
By calculating the evolution of surface energies and surface stress tensors of Ge-covered Si(001) with increasing Ge coverage, we derive the most probable Ge stoichiometry in the subsurface regions beyond 1 monolayer coverage. We compare the calculated surface reconstruction and surface stress at the thermodynamic and kinetic limits to experiment to provide a quantitative understanding of the recently observed Ge-induced reversal of surface stress anisotropy.Keywords
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