Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)
- 1 May 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (3) , 954-960
- https://doi.org/10.1116/1.581670
Abstract
The effects of vacuum and inert gas annealing of ultrathin (∼20 Å) tantalum pentoxide films deposited on Si(100), with and without nitrogen passivation, were examined. Without nitrogen passivation, annealing to 820 °C for 10 min led to oxidized silicon at both the and -vacuum interfaces and some tantalum silicide formation at the interface. Nitridation inhibited these processes.
Keywords
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