Effect of p-base sheet and contact resistances on static current-voltage characteristics of scaled low-voltage vertical power DMOSFETs
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (6) , 270-272
- https://doi.org/10.1109/55.82057
Abstract
Static current-voltage characteristics of low-voltage scaled power double-diffused MOSFETs fabricated using selectively formed TiSi/sub 2/ films on gate polysilicon and source contact regions are reported. It is shown that considerable modulation of drain-source current-voltage characteristics results from increased p-base sheet and contact resistances. This effect is found to vanish at higher operating temperatures. Increased p-base contact resistance also results in a large forward voltage drop for the body p-n junction diode.Keywords
This publication has 12 references indexed in Scilit:
- Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETsIEEE Journal of Solid-State Circuits, 1990
- Novel refractory contact and interconnect metallizations for high-voltage and smart-power applicationsIEEE Transactions on Electron Devices, 1990
- High-frequency power MOSFETs fabricated using selectively deposited LPCVD tungstenElectronics Letters, 1989
- Selectively silicided vertical power DMOSFETs for high-frequency power conversionElectronics Letters, 1989
- Blanket LVD tungsten silicide technology for smart power applicationsIEEE Electron Device Letters, 1989
- High-performance vertical-power DMOSFETs with selectively silicided gate and source regionsIEEE Electron Device Letters, 1989
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975
- Source-drain breakdown in an insulated gate, field-effect transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973