Strain-assisted p-type doping of II-VI semiconductors
- 1 September 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (5) , 2065-2068
- https://doi.org/10.1063/1.344297
Abstract
By incorporating a II‐VI semiconductor into a strained‐layer superlattice, it should be possible to overcome the effects of deep hole traps near the valence‐band edge and hence to dope the semiconductor p type in many cases. This idea is illustrated for CdTe/ZnTe superlattices.This publication has 17 references indexed in Scilit:
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