On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

This publication has 16 references indexed in Scilit:

• AC hot-carrier effects in scaled MOS devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection
  Journal of Applied Physics, 1993
• Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET's
  IEEE Electron Device Letters, 1992
• Hot-Carrier Degradation During Dynamic Stress
  Published by Springer Nature ,1992
• Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET's
  IEEE Electron Device Letters, 1992
• Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holes
  Journal of Applied Physics, 1990
• Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistors
  IEEE Transactions on Electron Devices, 1990
• The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs
  IEEE Transactions on Electron Devices, 1990
• Passivation of paramagnetic Si-SiO2 interface states with molecular hydrogen
  Applied Physics Letters, 1988
• Dynamic stress experiments for understanding hot-carrier degradation phenomena
  IEEE Transactions on Electron Devices, 1988