Chlorine incorporation in silicon films deposited by low-pressure rf discharges in gas mixtures of SiCl4+H2+Ar
- 1 December 1984
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 4 (4) , 261-270
- https://doi.org/10.1007/bf00568980
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Silicon films deposited from SiCl4 by an r.f. cold plasma technique: X-ray photoelectron spectroscopy and electrical conductivity studiesThin Solid Films, 1984
- Mechanism and kinetics of tetrachlorosilane reactions in an argon-hydrogen microwave plasmaJournal of Applied Physics, 1984
- Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixturesThin Solid Films, 1983
- Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigationPlasma Chemistry and Plasma Processing, 1983
- Effect of frequency on the deposition of microcrystalline silicon from tetrachlorosilane in low-pressure r.f. plasmasPlasma Chemistry and Plasma Processing, 1982
- Preparation of polycrystalline silicon coatings from trichlorosilaneThin Solid Films, 1982
- Deposition of silicon from SiCl4 in an inductive r.f. low pressure plasmaThin Solid Films, 1982
- The dependence of coating in inductive R.F. plasmas on gas flow velocity, pressure and R.F. powerThin Solid Films, 1980
- R.f. plasma deposition of amorphous silicon films from SiCl4-H2Thin Solid Films, 1980
- Comparison of Optical and Electrical Properties of Hydrogenated a-Si Films Formed by Glow Discharge of SiH4 or SiCl4/H2Published by Springer Nature ,1979