Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
- 9 May 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 162 (3-4) , 121-125
- https://doi.org/10.1016/0022-0248(95)00950-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substratesApplied Physics Letters, 1995
- Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substratesApplied Physics Letters, 1995
- Improved reflectivity of AlPSb/GaPSb Bragg reflectorfor 1.55 µm wavelengthElectronics Letters, 1994
- High-reflectance AlPSb/GaPSb distributed Bragg reflectormirrors on InP grown by gas-source molecular beam epitaxyElectronics Letters, 1994
- Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applicationsIEEE Photonics Technology Letters, 1992
- High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxyApplied Physics Letters, 1991
- GaPSb: A new ternary material for Schottky diode fabrication on InPApplied Physics Letters, 1991
- Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxyApplied Physics Letters, 1991
- Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device designJournal of Applied Physics, 1982
- Calculation of energy band gaps in quaternary iii/v alloysJournal of Electronic Materials, 1981