Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (IV). Incorporation of phosphorus in the Si‐H‐Cl‐lP system
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (2) , 177-183
- https://doi.org/10.1002/crat.19800150209
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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