Stopping power for low-velocity Mg ions in Si, Ge, and GaAs
- 15 June 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (17) , 13967-13970
- https://doi.org/10.1103/physrevb.43.13967
Abstract
The stopping power for ions in Si, Ge, and GaAs has been studied in the energy region 0–0.8 MeV/nucleon by application of the inverted-Doppler-shift attenuation-analysis method. Compared to the commonly used empirical electronic stopping power by Ziegler, Bierscak, and Littmark, significant deviations and a different velocity dependence were obtained. The electronic stopping power was determined to an accuracy of ±5%. The experimental nuclear stoping power was taken into account in the deduction of the electronic stopping power.
Keywords
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