Nuclear microprobe application to semiconductor process development: Silicide formation and multi-layered structure
- 1 January 1994
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 127 (3-4) , 357-365
- https://doi.org/10.1080/10420159408221044
Abstract
A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.Keywords
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