GaN Bipolar Junction Transistors with Regrown Emitters
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 4 (5) , G39-G41
- https://doi.org/10.1149/1.1357697
Abstract
Small-area emitter) GaN bipolar junction transistors (BJTs) incorporating a superlattice GaN(Mg)/AlGaN(Mg) base contact layer and a selectively regrown emitter were fabricated using a self-aligned dry etch process. The dc current gains were typically 10 at 25°C, and the devices were operated up to emitter current densities of 15 kA cm−2. The BJTs exhibited high emitter injection efficiency, indicating the presence of a good interface between the initial epi structure and the regrown emitter. © 2001 The Electrochemical Society. All rights reserved.This publication has 24 references indexed in Scilit:
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