Heterostructures in MODFETs

This publication has 48 references indexed in Scilit:

• Transport properties of semiconductor heterostructures
  Published by Springer Nature ,2007
• Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions
  Electronics Letters, 1986
• Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method
  IEEE Electron Device Letters, 1985
• AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD Wafers
  IEEE Electron Device Letters, 1985
• Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures
  Applied Physics Letters, 1985
• Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers
  IEEE Transactions on Electron Devices, 1984
• Electron energy levels in GaAs-Ga1−xAlxAsheterojunctions
  Physical Review B, 1984
• Two-dimensional electron gas m.e.s.f.e.t. structure
  Electronics Letters, 1980
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions
  Japanese Journal of Applied Physics, 1980
• Electron mobilities in modulation-doped semiconductor heterojunction superlattices
  Applied Physics Letters, 1978