Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5B) , L649
- https://doi.org/10.1143/jjap.31.l649
Abstract
Sample damage induced by 400 keV He+ microprobe irradiation during channeling measurements was studied on GaAs and Si. The minimum scattering yield as a function of microprobe dose was measured to investigate the influence of flux densities in GaAs and Si. Threshold doses for damage formation in GaAs were 3×1017-1.2×1018 He+/cm2, depending on flux densities within a range of 1-15 pA/µm2. The threshold dose in Si was 1.6×1018 He+/cm2, independent of flux densities within a range of 0.4-10 pA/µm2. The threshold doses in GaAs were lower than those in Si.Keywords
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