Chemical beam epitaxy of AlGaAs and AlInAs using trimethylamine alane precursor
- 2 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 189-194
- https://doi.org/10.1016/0022-0248(92)90389-z
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1991
- The feasibility of using trimethylamine alane as an Al precursor for MOMBEJournal of Crystal Growth, 1991
- Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alaneJournal of Crystal Growth, 1990
- Infrared studies of exchange and pyrolysis reactions in mixtures of trimethylamine alane and trimethylgalliumJournal of Crystal Growth, 1990
- Carbon incorporation in AlGaAs grown by CBEJournal of Crystal Growth, 1990
- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alaneApplied Physics Letters, 1990
- Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxyJournal of Applied Physics, 1987
- Automated growth of AlxGa1−xAs and InxGa1−xAs by molecular beam epitaxy using an ion gauge flux monitorJournal of Vacuum Science & Technology B, 1985
- Characterization of LPCVD Aluminum for VLSI ProcessingJournal of the Electrochemical Society, 1984