An efficient CAD-oriented large-signal MOSFET model

This publication has 22 references indexed in Scilit:

• LDMOS transistor for SMART POWER circuits: modeling and design
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• An efficient parameter extraction methodology for the EKV MOST model
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• 120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Characterizing the gate to source nonlinear capacitor role on FET IMD performance
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A new large-signal model based on pulse measurement techniques for RF power MOSFET
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Modeling and characterization of an 80 V silicon LDMOSFET for emerging RFIC applications
  IEEE Transactions on Electron Devices, 1998
• Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
  IEEE Transactions on Microwave Theory and Techniques, 1998
• A new empirical nonlinear model for HEMT and MESFET devices
  IEEE Transactions on Microwave Theory and Techniques, 1992
• Compact DC model of GaAs FETs for large-signal computer calculation
  IEEE Journal of Solid-State Circuits, 1983
• Approximation of junction field-effect transistor characteristics by a hyperbolic function
  IEEE Journal of Solid-State Circuits, 1978