Minority-carrier generation in n-InP/SiO2 capacitors
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1) , 86-88
- https://doi.org/10.1063/1.90903
Abstract
Zerbst and DLTS measurements have been used to study the processes active for minority‐carrier generation in n‐InP/SiO2 capacitors. Surface generation velocities near 104 cm/sec were observed, and generation in the bulk proceeds via a level below midgap which has a large cross section for electron emission. The present capacitors have low leakage but no ’’inversionlike’’ C‐V response at low frequency. Comparison with Langmuir film structures having exactly opposed properties indicates minority charge is trapped in the present capacitors for all values of the applied potential.Keywords
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