Read-disturb and endurance of SSI-flash E/sup 2/PROM devices at high operating temperatures
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (12) , 2466-2474
- https://doi.org/10.1109/16.735723
Abstract
No abstract availableKeywords
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