Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling
- 1 May 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 68 (1-4) , 443-449
- https://doi.org/10.1016/0168-583x(92)96122-f
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Gettering of copper in proton- and helium-bombarded buried regions of gallium phosphidePhysica Status Solidi (a), 1988
- Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantationSolid-State Electronics, 1987
- Strain in GaAs by low-dose ion implantationJournal of Applied Physics, 1987
- Damage profile on high energy ion implanted GaPPhysica Status Solidi (a), 1986
- Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cellsJournal of Applied Physics, 1986
- Damage Profiles in Ion Implanted SiliconPhysica Status Solidi (a), 1984
- Picosecond InP optoelectronic switchesApplied Physics Letters, 1982
- Very efficient void formation in ion implanted InSbApplied Physics Letters, 1980
- Proton bombarded double heterostructure LED’sJournal of Electronic Materials, 1977
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970