Study of etch rate characteristics of SF/sub 6//He plasmas by response-surface methodology: effects of interelectrode spacing
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 2 (4) , 178-182
- https://doi.org/10.1109/66.44622
Abstract
No abstract availableKeywords
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