Semi-insulating InP grown at low temperature by metalorganic chemical vapor deposition

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Abstract
The growth of semi‐insulating epitaxial InP layers at low substrate temperature (460 °C) by low‐pressure metalorganic chemical vapor deposition has been demonstrated using CCl4 as a dopant source. The resistivity of the material is a function of diluted CCl4 flow rate used during growth. For flow rates less than 5 sccm the material is n type, but for higher flows the resistivity of the material is approximately 5×109 Ω cm. The semi‐insulating behavior of the material is maintained after annealing at 600 °C. Transmission electron microscopy does not reveal the presence of phosphorus precipitates in as‐grown samples or in samples annealed at 400 and 600 °C. There is significant carbon, hydrogen, and chlorine incorporation in the layers, as measured by secondary ion mass spectrometry. Room‐temperature photoluminescence measurements suggest that nonradiative recombination is significant in the material and increases in samples grown with higher CCl4 flows.