A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
Top Cited Papers
- 1 May 2000
- journal article
- review article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (5) , 1018-1027
- https://doi.org/10.1109/16.841236
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Fast turn characterization of SIMOX wafersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The HgFET: a new characterization tool for SOI silicon film propertiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Numerical simulation of the pseudo-MOSFET characterization techniqueSolid-State Electronics, 1999
- Circular Pseudo-Metal Oxide Semiconductor Field Effect Transistor in Silicon-on-Insulator Analytical Model, Simulation, and MeasurementsElectrochemical and Solid-State Letters, 1999
- Detailed characterization of Unibond materialMicroelectronic Engineering, 1997
- A new lifetime characterization technique using drain current transients in SOI materialSolid-State Electronics, 1996
- Model for carrier lifetime extraction from pseudo-MOSFETtransientsElectronics Letters, 1996
- Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistorNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Silicon on insulator material technologyElectronics Letters, 1995
- Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafersIEEE Electron Device Letters, 1992