"RADON-5E" portable pulsed laser simulator: description, qualification technique and results, dosimetry procedure
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- CMOS IC transient radiation effects investigations, model verification and parameter extraction with the test structures laser simulation testsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Test CMOS/SOS RAM for transient radiation upset comparative research and failure analysisIEEE Transactions on Nuclear Science, 1995
- Critical evaluation of the pulsed laser method for single event effects testing and fundamental studiesIEEE Transactions on Nuclear Science, 1994
- Charge generation and collection in p-n junctions excited with pulsed infrared lasersIEEE Transactions on Nuclear Science, 1993
- Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasersIEEE Transactions on Nuclear Science, 1988
- Experimental Methods for Determining Latchup Paths in Integrated CircuitsIEEE Transactions on Nuclear Science, 1985
- Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor DevicesIEEE Transactions on Nuclear Science, 1984
- The Hardness Assurance Wafer Probe - HAWPIEEE Transactions on Nuclear Science, 1983
- Transient Radiation Screening of Silicon Devices Using Backside Laser IrradiationIEEE Transactions on Nuclear Science, 1982
- An Investigation of the Transient Ionizing Radiation Response of Diffused Resistors Using a Pulsed LaserIEEE Transactions on Nuclear Science, 1980