Thin gate and analog capacitor dielectrics for submicron device fabrication
- 1 January 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (1) , 45-55
- https://doi.org/10.1007/bf02670919
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Annealing Characteristics of Ultrathin Silicon Oxides Grown at Low TemperaturesJournal of the Electrochemical Society, 1990
- 1/f noise interpretation of the effect of gate oxide nitridation and reoxidation in dielectric trapsIEEE Transactions on Electron Devices, 1990
- The Kinetics of Low Pressure Rapid Thermal Oxidation of SiliconMRS Proceedings, 1989
- Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked filmsSolid-State Electronics, 1988
- Properties of thin oxide-nitride-oxide stacked filmsJournal of Electronic Materials, 1988
- A Comparison of RTO and Furnace OxidesMRS Proceedings, 1987
- Electrical Characteristics of High Pressure Nitrided OxidesMRS Proceedings, 1986
- Nitride, Nitrided Oxide and Oxidized Nitride for Thin DielectricsMRS Proceedings, 1986
- Effect of Nitrogen and Oxygen/Nitrogen Mixtures on Oxide Charges in MOS StructuresJournal of the Electrochemical Society, 1975
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967